An Improved Laser Technique for Accurately Determining the Compensation Density in n-Type Narrow Gap Semiconductor.
Abstract
This document discloses a method for accurately determining the compensation density of n-type narrow-gap semiconductors. A semiconductor sample is irradiated with laser pulses of a particular density and pulse width for a particular time length with the sample maintained at a low temperature to generate photo-excited carriers within the semiconductor sample. Photo-Hall measurements are made on the semiconductor sample during and after the laser pulse to determine the mobility, mu, and carrier density, n, as a function of time using suitable equipment such as a computer controlled digital processing oscilloscope to display the curves. The curves displayed by the oscilloscope are compared with previously calculated curves to obtain a match and thereby determine the quality of the sample. By combining mesurements of the Hall effect and conductivity, one can deduce the carrier densities and mobilities as well as other various quantities by well-known formulas.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1980
- Accession Number
- ADD007044
Entities
People
- Filbert J. Bartoli
- Jerry R. Meyer
Organizations
- United States Department of the Navy