Semiconductor Composition.
Abstract
A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, (Pb sub 1-w Cd sub w) a (S) sub 1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500 + or - 0.003), deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 25, 1980
- Accession Number
- ADD007233
Entities
People
- James D. Jensen
- Richard B. Schoolar
Organizations
- United States Department of the Navy