Method of Selectively Etching a Semiconductor Substrate.

Abstract

The general object of this invention is to provide a method of selectively etching a semiconductor substrate. A further object is to provide such a method in which the resistance of photoresist masking films to semiconductor etchants is increased so that deep etching can take place either through long exposure periods or through the use of vigorous etchants. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 22, 1980
Accession Number
ADD007585

Entities

People

  • Nicholas O. Korolkoff
  • Sidney Marshall
  • Vincent E. Rible

Organizations

  • United States Army

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Inventions
  • Resistance
  • Semiconductors
  • Solid State Electronics
  • Substrates

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene