Method of Making Gete Infrared Detector.
Abstract
A method of fabricating a GeTe infrared detector using a photolithographic process. An amorphous film of GeTe is vacuum deposited on a high mass and low thermal conductive substrate. The film of GeTe is covered with a photoresist layer which is developed into a mask. The GeTe is then selectively etched through the photoresist mask using ferric chloride. The photoresist mask is removed and electrical conductors are vacuum deposited on the GeTe film and selectively etched through a photoresist pattern. The conductor can also be deposited on the substrate etched prior to deposition of the GeTe layer. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 25, 1980
- Accession Number
- ADD007787
Entities
People
- Raymond J. Goetz
Organizations
- United States Department of the Navy