Microwave Controlled Field Effect Switching Device.
Abstract
A microwave switching device replacing PIN diodes and operating at higher speeds requires reduced switching current. A field effect controlled device is utilized with no ground plane, for elimination of source-ground and drain-ground capacitance. Massive source and drain structures reduce terminal inductance. A low resistance active region provides dynamic switching capability improving over prior art devices in operating frequencies and speeds. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 09, 1980
- Accession Number
- ADD007912
Entities
People
- Robert V. Garver
Organizations
- United States Army