Band Interacting Tunnel Heterojunction.

Abstract

A bilateral tunnel device having a voltage dependent transfer coefficient is disclosed which includes a heterostructure consisting of a first layer of GaSb sub 1-yAS sub y, a second layer of In sub 1-xGA sub xAS, and a third layer of GASb sub 1-yAS sub y. The thicknesses of the first and third layers are not critical but the thickness of the second layer must be less than 200 angstroms thick. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel device of the instant invention.

Document Details

Document Type
Technical Report
Publication Date
Mar 09, 1981
Accession Number
ADD008180

Entities

People

  • George A. Sai-halasz
  • Leo Esaki

Organizations

  • United States Army

Tags

DTIC Thesaurus Topics

  • Coefficients
  • Electronic Equipment
  • Electronics
  • Heterojunctions
  • Inventions
  • Materials
  • Semiconductor Devices
  • Semiconductor Junctions
  • Solid State Electronics
  • Thickness

Readers

  • Fluid Mechanics and Fluid Dynamics.
  • Semiconductor Device Technology