Improved Field-Effect Transistor.

Abstract

This invention discloses a method for improving field-effect transistors. Wherein the resistivity of the upper layer of the source-gate channel region of a GaAs field-effect transistor (FET) may be selectively raised. Impurity ions are implanted in the source-gate channel region followed by a much shallower implant of boron in the same region. The boron ion concentration should exceed the N+ impurity ion concentration by a factor of 2 or more.

Document Details

Document Type
Technical Report
Publication Date
Sep 16, 1980
Accession Number
ADD008413

Entities

People

  • Max N. Yoder

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Impurities
  • Inventions
  • Transistors

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Semiconductor Device Technology