InAs-Gasb Tunnel Diode.
Abstract
Disclosed is a tunnel diode consisting of an accumulation region of p-type GaSb and an accumulation region of n-type InAs separated by a thin layer of a quarternary compound consisting of InGaSbAs. Such a diode structure converts the interface between the two accumulation regions of p-type and n-type material from what would normally be an ohmic junction into a tunneling junction. Such a tunnel diode requires no heavy doping which is normally required for a tunnel diode. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 23, 1981
- Accession Number
- ADD008493
Entities
People
- Chin-an Chang
- Leo Esaki
Organizations
- United States Army