Millimeter Wave Power Limiter.
Abstract
Disclosed is a millimeter wave bulk effect RF power limiter consisting of a planar PIN diode formed on a gallium arsenide (GaAs) substrate which also comprises the waveguide structure for RF energy in the 60-300GHz range. The PIN diode is comprised of a wedge of intrinsic type semiconductor material formed across the top surface of the substrate and having mutually opposing regions of p and n type semiconductor material fabricated in the side edges of the wedge to which is attached planar beam leads. With suitable electrical operating potentials applied to the PIN diode avalanche breakdown occurs at a critical RF power level which acts to limit the flow of RF energy flow in the structure past the location of the PIN diode. Such a structure permits the device to be integrated into the front end sections of receivers utilized in communications, missile guidance and radar systems operable in the millimeter and sub-millimeter frequency range. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 12, 1981
- Accession Number
- ADD008504
Entities
People
- Samuel Dixon Jr.
Organizations
- United States Army