Surface Channel Charge Transfer Device on Indium Phosphide.

Abstract

A charge transfer device is provided having a p-type semi-conducting indium phosphide substrate on which a pair of channel contacts are disposed. An insulating layer spans the substrate surface between the contacts. Gate electrodes are disposed on the insulating layer between the channel contacts. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 29, 1981
Accession Number
ADD008561

Entities

People

  • David A. Collins
  • Derek L. Lile

Organizations

  • United States Department of the Navy

Tags

DTIC Thesaurus Topics

  • Charge Transfer
  • Electric Charge
  • Electrical Equipment
  • Electrodes
  • Substrates

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene