Quadrant Avalanche Photodiode.

Abstract

This document describes a quadrant avalanche photodiode with large surface areas is made using photolithographic planar technology. The use of proton bombardment creates semi-insulating material around the quadrants. Semiinsulating material prevents cross-talk between quadrants. The Schottky barrier quadrant detectors were fabricated using GaAs(1-x) Sb(x) ternary alloys grown epitaxially on heavily doped GaAs substrates.

Document Details

Document Type
Technical Report
Publication Date
Jul 13, 1981
Accession Number
ADD008732

Entities

People

  • Marian E. Hills
  • Nicholas Bottka

Organizations

  • United States Department of the Navy

Tags

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Detectors
  • Electromagnetic Wave Detectors
  • Materials
  • Optical Detectors
  • Photodiodes
  • Proton Bombardment
  • Quadrants
  • Substrates
  • Warning Systems

Fields of Study

  • Materials science

Readers

  • Atmospheric Science/Meteorology
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Microelectromechanical Systems