Monolithically Interconnected Series-Parallel Avalanche Diodes.
Abstract
Disclosed is an array of avalanche diodes and its method of manufacture which results in plural pairs of series connected mesa-etched avalanche (TRAPATT) diodes being selectively connected in parallel by metallized air bridges for increasing the impedance level and thereby the peak and average power level available from microwave oscillators and amplifiers configured therefrom. The various series connected diodes are placed in near proximity to respective neighboring diode pairs to reduce parasitics but at the same time the spacing is made sufficiently large to prevent thermal spreading of one diode pair to overlap that of the adjacent diode pair. The metallized air bridges in addition to providing a low inductance interconnection, provide an integrated heat capacitance which is necessary for high power operation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 06, 1979
- Accession Number
- ADD008938
Entities
People
- Arye Rosen
- Jerome B. Klatskin
Organizations
- United States Army