Planar Doped Barrier Gate Field Effect Transistor.
Abstract
Disclosed is an epilayer field effect transitor having a planar doped barrier gate formed on an n-type semiconductor planar channeel region intermittent drain and source terminals formed on the surface of the channel region. The semiconductor channel region is fabricated on a semiconductor substrate, preferably GaAs and being separated therefrom by one or more semiconductor planar buffer regions. The planar doped barrier gate comprises an n+ - pi - p(+) - pi structure grown by molecular beam epitaxy over the n-type channel region. Application of an electrical potential to the gate modulates the channel charge depletion in the semiconductor channel region underlying the gate causing a variation in the channel conductance laterally between the source and drain terminals. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 23, 1981
- Accession Number
- ADD009048
Entities
People
- Roger J. Malik
- Thomas R. Aucoin
Organizations
- United States Army