Niobium Tunnel Junction and Its Fabrication by Reactive Ion Beam Oxidation.
Abstract
A method for growing high quality, ultra thin oxide layers on metal films, suitable for use as tunneling barriers in Josephson Junction devices. The oxides are produced with an argon-oxygen (Ar-O) ion beam, and the rate of growth is determined by the competition between oxidation and sputtering by the ions. This method results in variable current density submicron niobium (Nb) -lead (Pb) alloy Josephson Junctions with critical current density from low values to values exceeding 100,000 amp/sq cm and low leakage currents at voltages below the energy gap. An edge geometry has been developed, allowing in-line junctions to be formed on the ion mill-patterned edge of niobium (Nb) film. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 23, 1981
- Accession Number
- ADD009090
Entities
People
- Alan W. Kleinsasser
- Robert A. Buhrman
Organizations
- United States Department of the Navy