Method of Chemically Vapor Depositing a Silicide Film.
Abstract
A film of a silicide of a refractory metal is chemically vapor deposited onto a substrate by placing a susceptor containing the substrate in a chemical vapor deposition reactor, flowing a compound of a refractory metal and a silicon bearing chemical diluted in nitrogen over the susceptor containing the substrate and heating the susceptor and substrate. The film is compatible with common integrated circuit techniques. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 17, 1981
- Accession Number
- ADD009122
Entities
People
- Krishna C. Saraswat
Organizations
- United States Army