Refractory Oxide-Refractory InP Schottky Barrier.

Abstract

This abstract discloses a Schottky barrier with InP formed by disposing a very thin film (150 A) of a refractory metal oxide over an InP layer and then disposing a thin film of a refractory metal over the refractory metal oxide. The resulting Schottky barrier is high (greater than 0.65eV) with very low leakage current. By way of example, the refractory metal oxide may be TiO2 and the refractory metal TiW.

Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1981
Accession Number
ADD009164

Entities

People

  • Aristos Christou

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Films
  • Metal Oxides
  • Metals
  • Oxides
  • Refractory Metals
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.