Compound Semiconductor Device Performance and Reproducibility Improvement.
Abstract
This application discloses a method of treating a compound semiconductor substrate material, such as GaAs, to imporove activation efficiency, reproducibility and reliability. The substrate is subjected to a prebombardment to a shallow depth by ions of an element such as Ar, or Ga, or As, which will not significantly affect the doping concentration of the substrate. Ions from an activator element, or elements, are then used for bombardment so that their peak concentration level occurs at a depth of about 80% of the peak concentration level of the prebombardment ions. This provides a very high activation efficiency and a sharp capacitance-voltage profile.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 26, 1981
- Accession Number
- ADD009208
Entities
People
- Max Yoder
Organizations
- United States Department of the Navy