Thin Film Electroluminescent Device.
Abstract
This invention relates to the structure of a thin film electroluminescent device wherein an insulating layer (Y2O3) is disposed between a pair of outer active layers of doped semiconductor (ZnS:Mn). Contiguous to one outer layer of ZnS:Mn is a metal electrode while a transparent electrode is contiguous to the other outer ZnS:Mn layer. The composite structure, moreover, is formed on and supported by a glass substrate. Electroluminescent phenomenon occurs primarily at the layer interfaces upon the application of an alternating voltage applied across electrodes. Such a structure is more resistant to failure due to the fact that the ZnS:Mn layers next to the electrodes act as current limiting layers for preventing breakdown and destruction of the metal electrode for a certain applied voltage which would otherwise occur in electroluminescent structures having the active ZnS:Mn layer sandwiched between two insulating layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 28, 1982
- Accession Number
- ADD009309
Entities
People
- Joseph Murphy
Organizations
- United States Army