InP:Te Protective Layer for Reducing Substrate Dissociation.

Abstract

In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellerium to a concentration of about high 10 to the 18th power to low 10 to the 19th power.

Document Details

Document Type
Technical Report
Publication Date
Jun 25, 1982
Accession Number
ADD009636

Entities

People

  • Frank Z. Hawrylo

Organizations

  • United States Department of the Air Force

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Dissociation
  • Epitaxial Growth
  • Fluids
  • Liquid Phases
  • Liquids
  • Phase
  • Substrates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Surface Coatings Technology.