VMOS-FET IMPATT Diode Pulse Bias Circuit.

Abstract

This invention describes a VMOS-FET, IMPATT diode pulse bias circuit designed to provide a Gallium Arsenide IMPATT diode with a specified operating voltage and current under required conditions to generate an RF pulse. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1982
Accession Number
ADD009642

Entities

People

  • Ronald Scott Best

Organizations

  • United States Department of the Navy

Tags

DTIC Thesaurus Topics

  • Availability
  • Diodes
  • Elements
  • Gallium
  • Gallium Arsenides
  • Governments
  • Group 13 Elements
  • Impatt Diodes
  • Inventions
  • Metals
  • Post-Transition Metals
  • Radio Frequency Pulses

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics