Three-Mirror Active-Passive Semiconductor Laser.
Abstract
Disclosed is a gallium arsenide laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 07, 1982
- Accession Number
- ADD009648
Entities
People
- Elsa M. Garmine
- Gary A. Evans
- Joseph W. Niesen
Organizations
- United States Department of the Navy