A Planar Compound Semiconductor Insulated Gate Field Transistor (IGFET) and a Virtual Self-Aligned Process for Making the Same.
Abstract
The present Invention relates, in general, to a novel compound semiconductor insulated gate field effect transistor (IGFET) and to a novel process for making the device. Indium phosphide (InP) has received increasing attention as a promising semiconductor material in the field of high frequency microwave devices and high speed logic circuits due to its high electron drift velocity. The electron drift velocity for InP is higher than other conventional semiconductors, i.e., silicon (Si) and gallium arsenide (GaAs). Additionally, the use of semi-insulating InP has been found to result in a 100 times reduction in parasitic capacitance as compared to that of conventional p-type substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 1982
- Accession Number
- ADD009921
Entities
People
- Marvin L. Bark
- Wen F. Tseng
Organizations
- United States Department of the Navy