Composite Resist Structures for Submicron Processing in Electron/Ion Lithography.
Abstract
Composite resist structures are described for processing submicron electronics and optical circuits requiring very good pattern resolution between lines because of extremely close spacings between circuit elements. The present invention discloses matrix and layer structures wherein high atomic number (Z) material is used to confine the scattering of the electron beams in the resist. A low Z material is used in combination with a high Z material in the layered configuration to slow down electron velocities without creating a great number of scattered electrons.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 10, 1982
- Accession Number
- ADD009969
Entities
People
- Te Ning Chin
Organizations
- United States Army