Improved TUNNETT Diode and Method of Making.

Abstract

A TUNNETT(Tunneling Transit Time) electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type, and a collector of high doping of the same semiconductivity type. A Schottky barrier is formed by placing a metal electrode on the injector and an ohmic contact may be made on the collector. In a preferred embodiment the injector is made of Ge grown on the drift region by vacuum epitaxy. The drift region is preferably GaAs grown by epitaxy on a GaAs collector. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 29, 1982
Accession Number
ADD010030

Entities

People

  • Aristos Christou
  • John E. Davey

Organizations

  • United States Department of the Navy

Tags

DTIC Thesaurus Topics

  • Accumulators
  • Electrodes
  • Injectors
  • Metal-Semiconductor Junctions
  • Quantum Tunneling
  • Tunneling

Fields of Study

  • Materials science

Readers

  • Internal Combustion Engine (ICE) Technology.
  • Microwave Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene