High Frequency Ohmic Contact.
Abstract
In one embodiment, a ring-shaped contact is formed around a high frequency semiconductor component such as a Schottky diode, with the ring contact being made through a ring-shaped window down to the active semiconductor layer which forms part of the Schottky diode. A high conductivity second semiconductor layer is formed in the ring-shaped window adjacent the active semiconductor layer before depositing electrical contact material therein. An electrical contact bridge is formed from the top of the Schottky diode across the surrounding ring-shaped contact. In a preferred construction of this embodiment, the active semiconductor layer is n-type InP disposed on a substrate of semi-insulating InP, the Schottky metalization for the diode is a refractory metal, and the second semiconductor layer is n(+)InP formed by diffusion an n type doping agent into the active semiconductor layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 29, 1982
- Accession Number
- ADD010141
Entities
People
- Aristos Christou
- John E. Davey
Organizations
- United States Department of the Navy