Process of and Apparatus for Laser Annealing of Film-Like Surface Layers of Chemical Vapor Deposited Silicon Carbide and Silicon Nitride.
Abstract
A process of an related apparatus for achieving laser annealing of film-like surface layers of chemical vapor deposited silicon nitride and silicon carbide to relieve their inherent residual stresses. A laser beam is used to anneal the layers, in conjunction with a photoacoustic gas cell and related beam modulating means for utilizing a photoacoustic effect principal for monitoring, detecting and effectuating beam control as needed during the laser annealing process.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 20, 1983
- Accession Number
- ADD010327
Entities
People
- Douglas N. Rose
Organizations
- United States Army