Silicon Carbide Shapes.

Abstract

Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide, the graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

Document Details

Document Type
Technical Report
Publication Date
May 23, 1983
Accession Number
ADD010379

Entities

People

  • Arrigo Addamiano
  • Philipp H. Klein

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Compound Semiconductors
  • Elements
  • Graphitic Materials
  • Group 14 Elements
  • Metalloids
  • Semiconductors
  • Silicon
  • Silicon Carbide

Readers

  • Energy Conservation and Renewable Energy Engineering.
  • Fluid Dynamics.
  • Thin Film Deposition Science.