Measurement of Proximity Effects in Electron Beam Lithography.
Abstract
This document describes a test pattern which is applied to a wafer or mask by electron beam lithography for measuring proximity effects. The pattern comprises two lines which intersect at a small angle, for example 1 degree so that the proximity effects of the two lines combine within the angle to displace the angle vertex by an amount much larger than the proximity effect of an isolated line. A calibration scale is provided to measure this enhanced proximity effect by viewing the pattern with an optical microscope. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 25, 1984
- Accession Number
- ADD010815
Entities
People
- W. B. Glendinning
Organizations
- United States Army