A Semi-Insulating InGaAs Epitaxial Layer.
Abstract
The invention presents a high resistivity, semi-insulating layer of the semiconductor material comprised of InGaAs prepared by liquid phase epitaxial growth upon a lattice-matched semiconducting substrate. To achieve the high resistivity, semi-insulating properties the semiconductor material comprising InGaAs is doped with an element selected from the group consisting of Mn, Cr, Ni, Co, and Fe. A method is described wherein Fe-doped In0.53Ga0.47As is grown by liquid phase epitaxial means upon an InP substrate. The growth procedures involve a proper selection of the amount of dopant to be used, e.g..005 to .005% mole fraction Fe, and the times and temperatures required for bake out of the doped composition of In0.53Ga0.47As. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 03, 1983
- Accession Number
- ADD010823
Entities
People
- A. R. Clawson
- D. I. Elder
- H. H. Weider
Organizations
- United States Department of the Navy