MBE (Molecular Beam Epitaxy) Growth Technique for Matching Superlattices Grown on GaAs Substrates.

Abstract

Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and in1-xGaxAs-GaSb1-yAsy superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 02, 1984
Accession Number
ADD010950

Entities

People

  • C. A. Chang
  • L. Esaki
  • L. L. Chan

Organizations

  • United States Army

Tags

DTIC Thesaurus Topics

  • Dislocations
  • Epitaxial Growth
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Sequences
  • Substrates
  • Superlattices

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology