Radiation Hardened Ion-Implanted GaAs Field Effect Transistor and Method for Making the Same Specification.

Abstract

The present Invention is directed to a novel gallium arsenide field effect transistor and, more particularly, to a novel gallium arsenide field effect transistor which exhibits greatly improved tolerance to the effects of pulsed ionizing radiation.

Document Details

Document Type
Technical Report
Publication Date
Jul 18, 1983
Accession Number
ADD011264

Entities

People

  • E. E. King
  • W. T. Anderson Jr.

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Field Effect Transistors
  • Gallium
  • Gallium Arsenides
  • Inventions
  • Ionizing Radiation
  • Radiation
  • Specifications
  • Transistors

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Explosive Engineering.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics