Monolithic Planar Doped Barrier Limiter.

Abstract

This patent application describes a passive millimeter wave image guide power limiter comprising a length of dielectric transmission line or waveguide for millimeter wave frequencies located on a relatively thin conductive ground plane forming thereby an image guide and including a planar doped barrier diode structure formed in the dielectric transmission line with the planar doped barrier structure being integrally grown in a slot milled in the constituent material, i.e. gallium arsenide, of the waveguide transversely across the width dimension thereof so as to be orientated perpendicular to the flow of RF power being propagated along its length dimension. The planar doped barrier structure becomes conductive at a predetermined power level to reflect any further incident RF power back toward the power source.

Document Details

Document Type
Technical Report
Publication Date
Feb 25, 1985
Accession Number
ADD011578

Entities

People

  • R. J. Malik
  • S. Dixon Jr.
  • T. R. Aucoin

Organizations

  • United States Army

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Gallium Arsenides
  • Materials
  • Millimeter Waves
  • Patent Applications
  • Power
  • Power Levels
  • Radio Frequency Power
  • Transmission Lines
  • Waveguides

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics