Heat Pipe and Method of making same.

Abstract

The present invention relates generally to semiconductor crystal growth, and, in particular, relates to a device used in an apparatus for crystal growth. The instant invention sets forth a heat pipe for crystal growth that is able to operate at high pressure/temperature. A cylindrical heat pipe for use in a crystal growth furnace has walls of tungsten with a layer of titanium deposited thereover to prevent oxidation. Strengthening members are placed between the walls to provide added strength. A wick structure of tungsten is used in the annular chamber to carry a working fluid of lithium.

Document Details

Document Type
Technical Report
Publication Date
Feb 06, 1985
Accession Number
ADD011654

Entities

People

  • Ahern

Organizations

  • United States Department of the Air Force

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electronics
  • Heat Energy
  • Heat Pipes
  • High Pressure
  • Inventions
  • Oxidation
  • Pipes
  • Semiconductors
  • Solid State Electronics
  • Titanium
  • Transition Temperature
  • Tungsten

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Metallurgy
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene