Interdigital Schottky Barrier Capacitor Apparatus.
Abstract
The present invention relates broadly to Schottky barrier capacitors, and in particular to an interdigital Schottky barrier capacitor apparatus. In the prior art, the Schottky barrier diode is rather well known. In general, a Schottky barrier device comprises a semiconductor substrate layer that is formed by a first layer of heavily doped materials and a second layer of lightly doped materials upon which a layer of barrier metal is deposited thereon. The maximum reverse bias voltage which can be appplied to the Schottky barrier device is determined by the thickness of the lightly doped layer of semiconductive material which is deposited upon the substrate layer. This is only one of the factors that determined the reverse bias voltage, When a guardring is diffused into the lightly doped layer of semiconductive substrate material, the thickness of the layer is reduced, and therefore, the reverse bias voltage that can be applied to the Schottky device is reduced.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 07, 1985
- Accession Number
- ADD011799
Entities
People
- Bierig
Organizations
- United States Department of the Air Force