A TiW Diffusion Barrier for AuZn Ohmic Contacts to P-Type InP.
Abstract
This abstract discloses a low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP Semiconductor devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 27, 1985
- Accession Number
- ADD011823
Entities
People
- J. B. Boos
- N. A. Papanicolaou
- T. H. Weng
Organizations
- United States Department of the Navy