Dual Drain Mosfet detector for Crosstie Memory Systems.
Abstract
This patent application discloses a circuit for detecting binary information in crosstie memory systems includes a dual drain MOSFET device having a single channel with a common source and an integrated, thin-film strip of magnetic material suitable for the storage and propagation of Bloch line-crosstie pairs acting as both a shift register and the device's gate. Current flowing through the device, in the absence of a magnetic field, is equally distributed to each drain; however, changing magnetic fields, normal to the plane of the device and generated by Bloch line-crosstie pairs in the strip, interact with the current such that a distribution imbalance exists and one drain or the other receives a disproportionate fraction of the current depending upon the direction of the magnetic field.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 22, 1985
- Accession Number
- ADD011828
Entities
People
- N. Bluzer
Organizations
- United States Department of the Navy