Quasi-Accumulation Mode FET.
Abstract
A Field Effect Transistor (FET) capable with standing increased positive gate biasing with respect to the source contact without incurring the penalty of drawing excessive gate current, comprising a semi-insulating substrate layer; and active channel layer of doped n-type semi-conductor material disposed on the substrate layer; an active channel layer of doped n-type semi-conductor material disposed on the substrate layer; a first heteroepitaxial semi-insulating layer of a semi-insulating material having a bandgap greater than the bandgap of the active channel layer material disposed on said active channel layer. The first heteroepitaxial layer has a top surface, a designated first region, designated second region, adn a designated middle section disposed therebetween wherein the first region and the second region, and a designated middle section dispose there between wherein the first region and the second region of the first heteroepitaxial layer are implanted with activated donor impurities to form its source and drain regions. The device is also provided with conventional source, drain and gate contacts. In a preferred embodiment, a heavily donor doped Gallium arsenide heteroepitaxial layer is disposed between the source contact and the first heteroepitaxial layer and between the drain contact and the first heteroepitaxial layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 20, 1985
- Accession Number
- ADD011914
Entities
People
- M. N. Yoder
Organizations
- United States Department of the Navy