Self Aligned Notch for InP Planar Transferred Electron Oscillator.
Abstract
A method of fabricating a notched indium phosphide planar transferred electron oscillator device which automatically aligns the high-resistivity notch position immediately adjacent to the cathode contact by slant evaporation of a metal coating over the edge of a masking layer followed by ion implantation. (Patent Applications)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 13, 1986
- Accession Number
- ADD012185
Entities
People
- Steven C. Binari
Organizations
- United States Department of the Navy