Selectively Etching Microstructures in a Glow Discharge Plasma.
Abstract
Selective etching of microelectronic devices comprising crystal substrates is achieved by electrically masking conductive areas thereon which are not to be etched by ionic bombardment. The electrical masking is accomplished by biasing the selected areas with a bias voltage which will repel the ions, which are attracted to all of the unbiased portions of the microelectronic device.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 17, 1986
- Accession Number
- ADD012206
Entities
People
- Edward J. Staples
Organizations
- United States Army