Quantum Well Electron Barrier Diode.
Abstract
This patent application relates to electron barrier diodes, and more particularly, to an asymmetric quantum well electron barrier diode. A quantum well electron barrier diode is described which comprises a substrate, a first buffer layer on the substrate, a superlattice structure on the first buffer layer, a second buffer layer on the superlattice structure, a contacting layer on the second buffer layer and first and second ohmic contacts attached to the contacting layer and substrate respectively. The superlattice structure comprises a sequence of a plurality of high energy gap barrier layers interleaved with a plurality of low energy gap wells. The sequence is repeated until the desired thickness is reached. Current flows perpendicular to the layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 13, 1986
- Accession Number
- ADD012432
Entities
People
- Steven W. Kirchoefer
Organizations
- United States Department of the Navy