High Energy Optically Controlled Kilovolt Semiconductor Switch.

Abstract

A high enegry, optically controlled kilovolt semiconductor switch is described including a bulk piece of high resistivity semiconductor for illumination by a high speed laser. Said semiconductor has a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers using standard ohmic contact procedures.

Document Details

Document Type
Technical Report
Publication Date
Oct 23, 1987
Accession Number
ADD013449

Entities

People

  • Anderson H. Kim
  • Lawrence J. Bovino
  • Maurice Weiner
  • Terence Burke

Organizations

  • United States Army

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electrodes
  • Electronics
  • Energy
  • High Energy
  • Illumination
  • Impurities
  • Metal-Semiconductor Junctions
  • Semiconductors
  • Solid State Electronics
  • Standards

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene