High Power Diamond Traveling Wave Amplifier.
Abstract
An FET device especially useful in common gate amplifier circuits used as amplifiers of microwave and millimeter wave signals. The device has a diamond film layer constituting the device's channel. Device geometry is selected so that, in common gate amplifier circuit, device input and output are impedance matched to avoid phase cancellation between input and output. In one embodiment a boron nitride layer is disposed heteroepitaxially with the diamond channel and separating the channel from the gate. In another embodiment plural such devices are yoked together integrally source to drain in such a manner that charge carriers entering the second and subsequent stages do so at maximum velocity without the need to accelerate from zero to low velocity. The resulting device has a higher power handling capacity, upper frequency range, and dynamic range.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 23, 1987
- Accession Number
- ADD013493
Entities
People
- Max N. Yoder
Organizations
- United States Department of the Navy