An Article Consisting of a Silicon Carbide Layer on a High Resistivity Substrate and a Process for Making Such Article.
Abstract
An article comprised of the combination of a SiC semiconductor layer on a high-resistivity, poly-crystalline silicon substrate, as well as a method for making such article, is disclosed. The method for making such article comprises the steps of: depositing a layer of SiC on a Si substrate; depositing a layer of high-resistivity, polycrystalline silicon on a free surface of the SiC layer; protecting the layer of poly-crystalline silicon with a masking material; removing the Si substrate, thereby leaving the layer of poly-crystalline silicon as the surrogate substrate of the SiC layer; and removing the masking material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 28, 1987
- Accession Number
- ADD013638
Entities
People
- Bela Molnar
Organizations
- United States Department of the Navy