Radiation Hardening of MOSFET (Metal-Oxide-Semiconductor Field-Effect Device).
Abstract
A MOSFET device which typically utilizes silicon dioxide as an insulating material and which becomes inoperative under ionizing radiation conditions can be made to significantly enhance its radiation survivability by introducing crystalline zinc sulfide as an insulating material. The invention may be manufactured as one of three variations. Crystalline zinc sulfide may replace silicon dioxide as the gate insulator, the field insulator, or both the gate and field insulators.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 24, 1983
- Accession Number
- ADD013766
Entities
People
- Mark R. Ackermann
Organizations
- United States Department of the Air Force