Method of Forming Silicon Carbide Films on Tantalum Containing Substrates.
Abstract
A process for forming a smooth, continuous coating of silicon carbide upon tantalum carbide is disclosed, as are several useful manufacturers produced with the process. A tantalum carbide substrate may be formed directly upon metallic tantalum articles by disclosed means. The material formed with this process has been used to fabricate semiconducting devices including light emitting diodes and selective thermal radiators which can be operated at 1200 degrees C. The method is further useful for producing tantalum metal incandescent light filaments and corrosion resistant tantalum articles.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 17, 1988
- Accession Number
- ADD013791
Entities
People
- Arrigo Addamiano
- Philipp H. Klein
Organizations
- United States Department of the Navy