Dual Active Layer Photoconductor.
Abstract
A photoconductive semiconductor device having a source, a drain, and a photosensitive channel there between. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide. Patent applications. (mjm/rh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 29, 1988
- Accession Number
- ADD013877
Entities
People
- J. B. Boos
- Nicholas A. Pananicolaou
- Phillip E. Thompson
Organizations
- United States Department of the Navy