Platinum and Platinum Silicide Contacts on Beta-Silicon Carbide Specification.
Abstract
This invention relates to contact metallization on silicon carbide, specifically, to Schottky contacts of platinum and platinum silicide on Beta-silicon carbide. It is an object of this invention to provide a rugged and thermally stable rectifying contact metallization on SiC for high temperature semiconductor device applications. Additionally, it is an object of this invention to provide a Schottky metallization which has higher thermal stability than conventional gold metallization. Further, it is an object of this invention to provide a Schottky metallization which has superior adhesion properties to conventional gold metallization. Patent applications. (JES)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 25, 1988
- Accession Number
- ADD013917
Entities
People
- Nicolas A. Panacolaou
Organizations
- United States Department of the Navy