Niobium and Niobium Nitride Contacts on Semiconducting Material.
Abstract
This invention related generally to a metallization layer of niobium or niobium nitride on a semiconductor in an integrated circuit structure which can function from the superconducting temperature regime to above room temperature. Niobium or niobium nitride is deposited onto a heated gallium arsenide substrate. This metallization will maintain chemical stability after high temperature post processing. These materials provide a low resistivity metallization suitable for Schottky contacts used over a wide operating temperature range and are superconducting at low temperatures. Keywords: Patent applications; Thin films; Super conducting semiconductors. (AW)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1989
- Accession Number
- ADD014177
Entities
People
- Edward Cukauskas
- Harvey Newman
- Jeffrey Pond
- William Carter
Organizations
- United States Department of the Navy