Fabrication of NBN Based Electronic Devices with Silicon Barriers.
Abstract
A method of making a Josephson Junction is disclosed which includes the steps of depositing a base electrode layer of a refractory superconducting material on a substrate, depositing a first a passivation layer on the base electrode, depositing a barrier layer of refractory insulating semiconducting material on the passivation layer, depositing a second passivation layer on the barrier layer, and depositing a counter electrode on the second passivation layer. The layers are deposited at a substrate temperature of from about 5 C to about 7 C in an Ultra-High Vacuum sputtering system at a base pressure of less than or equal to 5 x 10 to the 8th power Torr. In the preferred embodiment a base electrode and counter electrode of NbN are separated by a barrier layer of hydrogenated silicon. When exposed to high post processing temperatures this structure maintains a chemically stable interface with the substrate. Keywords: Patent applications. (RH)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1989
- Accession Number
- ADD014230
Entities
People
- Edward Cukauskas
- William Carter
Organizations
- United States Department of the Navy