Bloch-Line Memory Element and RAM Memory.
Abstract
The present invention relates to a Bloch-line memory element and a nonvolatile RAM memory using such a Bloch-line memory element. The Bloch-line memory element comprises a planar magnetic memory element having magnetic domains separated by a wall which contains a Bloch-line disposed within the individual memory element. Coincident write lines interact with the magnetic element for writing a Bloch-line to a predetermined area within the memory element. For sensing the presence or absence of a Bloch-line within the predetermined area, one write conductor and a sense line are used for determining the logic state of the particular memory element. A plurality of memory elements are disposed in an address matrix and can be selected for reading from or writing to the particular Bloch-line RAM memory element for determining or writing bits of words. Keywords: Data storage systems; Memory devices; Patents. (kt)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 13, 1990
- Accession Number
- ADD014488
Entities
People
- Leonard J. Schwee
Organizations
- United States Department of the Navy